| 主权项 |
1. A solid-state imaging device having a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels, respectively, in first and second directions, where n is a positive integer, the sharing unit comprising:
a first structural portion and a second structural portion which are arranged in the first direction of a pixel portion, each of the first and second structural portions including four readout gate electrodes and one floating diffusion with respect to four photodiodes; an amplification transistor which has at least a portion thereof disposed between the first structural portion and the second structural portion, the amplification transistor comprising a source region and a drain region; a select transistor which has at least a portion thereof disposed between the first structural portion and the second structural portion, the select transistor comprising a source region and a drain region; and a reset transistor comprising a source region and a drain region; wherein the source region of the select transistor is the same as the drain region of the amplification transistor, wherein a first connection wiring connects the first floating diffusion, the second floating diffusion, an amplification gate electrode of the amplification transistor, and the source region of the reset transistor, wherein a signal line connected to the source region of the amplification transistor and a first power wiring connected to the drain region of the select transistor both extend in a longitudinal direction in parallel to a select wiring, wherein a second connection wiring is formed in a transverse direction to connect with the select wiring, and wherein the second connection wiring covers an entire width of the sharing unit. |
