Semiconductor light emitting device including a metal nitride buffer layer and fabrication method thereof

摘要

Provided are embodiments of a light emitting device and fabrication methods thereof. The light emitting device can include a buffer layer provided between a substrate and a semiconductor layer incorporating a high fusion point metal. In a fabrication method of the light emitting device, the buffer layer incorporating a high fusion point metal can be formed on a substrate, and a semiconductor layer can be formed on the buffer layer.

主权项

1. A semiconductor light emitting device, comprising:
a substrate including a bottom surface having a first central region and a first peripheral region outside the first central region; a first conductive semiconductor layer formed on the substrate; a metal layer between the substrate and the first conductive semiconductor layer and comprising a metal material having a substantially similar lattice structure to the substrate and having a lattice constant difference from the first conductive semiconductor layer in a range of 5-10% and having a melting point of 2,000° C. or higher; a metal nitride layer between the metal layer and the first conductive semiconductor layer and comprising at least the same metal material as that of the metal layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer and including an upper surface having a second central region and a second peripheral region outside the second central region; a first electrode on the first central region of the bottom surface of the substrate; and a second electrode on the second central region of the upper surface of the second conductive semiconductor layer, wherein the substrate is a conductive substrate, wherein the first peripheral region of the bottom surface of the substrate is exposed, wherein the second peripheral region of the upper surface of the second conductive semiconductor layer is exposed, wherein the metal layer is in direct physical contact with the substrate, wherein the metal nitride layer is in direct physical contact with the metal layer, wherein the metal layer comprises at least one of molybdenum, nickel, and tungsten; and wherein the metal nitride layer comprises at least one of molybdenum nitride, nickel nitride, and tungsten nitride.