Semiconductor device stacked structure

摘要

A semiconductor device stacked structure is disclosed, which includes multiple semiconductor devices and at least one reinforcing structure. The semiconductor devices are stacked on one another. At least one semiconductor device has at least one through silicon via. Each reinforcing structure surrounds a corresponding one of the at least one through silicon via and is electrically insulated from the semiconductor devices. The at least one reinforcing structure includes multiple reinforcing elements and at least one connecting element. Each reinforcing element is disposed between the semiconductor devices. Vertical projections of the reinforcing elements on a plane define a close region, and a projection of the at least one through silicon via on the plane is located within the close region. The connecting element is located in an overlapping region of the vertical projections of the reinforcing elements on the plane, for connecting the reinforcing elements to form the reinforcing structure.

主权项

1. A semiconductor device stacked structure comprising:
a plurality of semiconductor devices stacked on one another, at least one semiconductor device having at least one through silicon via; and at least one reinforcing structure, each of the at least one reinforcing structure surrounding a corresponding one of the at least one through silicon via and electrically insulated from the semiconductor devices, the at least one reinforcing structure comprising: a plurality of reinforcing elements disposed between the semiconductor devices, the plurality of reinforcing elements are overlapped with each other in a vertical direction and surround a vertical projection of the at least one through silicon via; and at least one connecting element located between overlapping regions in the vertical direction of the plurality of reinforcing elements, for connecting the plurality of reinforcing elements to form the reinforcing structure.