发明名称 Backplane for flat panel display apparatus, flat panel display apparatus, and method of manufacturing the backplane
摘要 A backplane includes: a substrate, a pixel electrode, which includes a transparent conductive material, on the substrate, a capacitor first electrode formed on the same layer as the pixel electrode, a first protection layer covering the capacitor first electrode and an upper edge of the pixel electrode, a gate electrode of a thin film transistor (TFT) formed on the first protection layer, a capacitor second electrode formed on the same layer as the gate electrode, a first insulating layer that covers the gate electrode and the capacitor second electrode, a semiconductor layer that is formed on the first insulating layer and includes a transparent conductive material, a second insulating layer covering the semiconductor layer, source and drain electrodes of the TFT that are formed on the second insulating layer, and a third insulating layer that covers the source and drain electrodes and exposes the pixel electrode.
申请公布号 US9048257(B2) 申请公布日期 2015.06.02
申请号 US201314085211 申请日期 2013.11.20
申请人 Samsung Display Co., Ltd. 发明人 Jeong Jong-Han;Choi Chaun-Gi
分类号 H01L51/56;H01L29/66;H01L27/12 主分类号 H01L51/56
代理机构 Knobbe Martens Olson & Bear LLP 代理人 Knobbe Martens Olson & Bear LLP
主权项 1. A method of manufacturing a backplane for a flat panel display apparatus, the method comprising: forming a pixel electrode and a capacitor first electrode on a substrate through a first mask process; forming a first protection layer covering the pixel electrode and the capacitor first electrode, and forming a gate electrode of a TFT and a capacitor second electrode on the first protection layer through a second mask process; forming a first insulating layer covering the gate electrode and the capacitor second electrode, and forming a semiconductor layer that comprises a transparent conductive material on a position corresponding to the gate electrode through a third mask process; forming a second insulating layer covering the semiconductor layer, forming a contact hole that penetrates the second insulating layer and exposes a portion of the semiconductor layer, and forming a via hole that penetrates the first protection layer, the first insulating layer, and the second insulating layer and exposes a portion of the pixel electrode through a fourth mask process; forming source and drain electrodes covering the contact hole and the via hole through a fifth mask process; and forming a third insulating layer covering the source and drain electrodes, and forming an opening that exposes an upper surface of the pixel electrode in the third insulating layer through a sixth mask process.
地址 KR