发明名称 |
Backplane for flat panel display apparatus, flat panel display apparatus, and method of manufacturing the backplane |
摘要 |
A backplane includes: a substrate, a pixel electrode, which includes a transparent conductive material, on the substrate, a capacitor first electrode formed on the same layer as the pixel electrode, a first protection layer covering the capacitor first electrode and an upper edge of the pixel electrode, a gate electrode of a thin film transistor (TFT) formed on the first protection layer, a capacitor second electrode formed on the same layer as the gate electrode, a first insulating layer that covers the gate electrode and the capacitor second electrode, a semiconductor layer that is formed on the first insulating layer and includes a transparent conductive material, a second insulating layer covering the semiconductor layer, source and drain electrodes of the TFT that are formed on the second insulating layer, and a third insulating layer that covers the source and drain electrodes and exposes the pixel electrode. |
申请公布号 |
US9048257(B2) |
申请公布日期 |
2015.06.02 |
申请号 |
US201314085211 |
申请日期 |
2013.11.20 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Jeong Jong-Han;Choi Chaun-Gi |
分类号 |
H01L51/56;H01L29/66;H01L27/12 |
主分类号 |
H01L51/56 |
代理机构 |
Knobbe Martens Olson & Bear LLP |
代理人 |
Knobbe Martens Olson & Bear LLP |
主权项 |
1. A method of manufacturing a backplane for a flat panel display apparatus, the method comprising:
forming a pixel electrode and a capacitor first electrode on a substrate through a first mask process; forming a first protection layer covering the pixel electrode and the capacitor first electrode, and forming a gate electrode of a TFT and a capacitor second electrode on the first protection layer through a second mask process; forming a first insulating layer covering the gate electrode and the capacitor second electrode, and forming a semiconductor layer that comprises a transparent conductive material on a position corresponding to the gate electrode through a third mask process; forming a second insulating layer covering the semiconductor layer, forming a contact hole that penetrates the second insulating layer and exposes a portion of the semiconductor layer, and forming a via hole that penetrates the first protection layer, the first insulating layer, and the second insulating layer and exposes a portion of the pixel electrode through a fourth mask process; forming source and drain electrodes covering the contact hole and the via hole through a fifth mask process; and forming a third insulating layer covering the source and drain electrodes, and forming an opening that exposes an upper surface of the pixel electrode in the third insulating layer through a sixth mask process. |
地址 |
KR |