| 发明名称 | Light-emitting device with improved light extraction efficiency | ||
| 摘要 | A light emitting device with improved light extraction efficiency includes an n-type layer, a p-type layer, an active region sandwiched between the n-type layer and the p-type layer, a characteristic AlGaN layer over which the n-type layer is formed, and an AlN layer on which the characteristic AlGaN layer is formed. The characteristic AlGaN layer has gradually enlarging bandgap width from that of the n-type layer to that of the AlN layer in the direction pointing from the n-type layer to the AlN layer. The light-emitting device may further include a nanoporous AlN layer over which the AlN layer is formed. | ||
| 申请公布号 | US9048387(B2) | 申请公布日期 | 2015.06.02 |
| 申请号 | US201313964030 | 申请日期 | 2013.08.09 |
| 申请人 | QINGDAO JASON ELECTRIC CO., LTD. | 发明人 | Zhang Jianping;Gao Ying;Wu Shuai;Zhou Ling |
| 分类号 | H01L33/00;H01L33/32;H01L33/06;H01L33/12 | 主分类号 | H01L33/00 |
| 代理机构 | J.C. Patents | 代理人 | J.C. Patents |
| 主权项 | 1. A light emitting device comprising: an n-type layer; a p-type layer; an active region sandwiched between the n-type layer and the p-type layer; a characteristic AlGaN layer over which the n-type layer is formed; an AlN layer on which the characteristic AlGaN layer is formed; and a nanoporous AlN layer over which the AlN layer is formed; wherein the characteristic AlGaN layer has gradually enlarging bandgap width from that of the n-type layer to that of the AlN layer in the direction pointing from the n-type layer to the AlN layer. | ||
| 地址 | Shangdong CN | ||