Formation of thin layers of semiconductor materials

摘要

There is disclosed a method of forming layers of either GaAs or germanium materials such as SiGe. The germanium material, for example, may be epitaxially grown on a GaAs surface. Layer transfer is used to transfer the germanium material, along with some residual GaAs, to a receiver substrate. The residual GaAs may be then removed by selective etching, with the boundary between the GaAs and the germanium material providing an etch stop.

主权项

1. A method of forming a thin film of a germanium material, comprising:
epitaxially growing said germanium material on a surface of GaAs, said surface being carried by a donor substrate; carrying out layer transfer of the germanium material from the donor substrate to a receiver substrate with residual GaAs material from adjacent to said surface attached to said transferred germanium material; and removing the attached residual GaAs material leaving only the germanium material on the receiver substrate, wherein the germanium material is silicon germanium, denoted as SixGe1-x, such that x is in the range from 0.01 to 0.03.