发明名称 Hybrid bonding systems and methods for semiconductor wafers
摘要 Hybrid bonding systems and methods for semiconductor wafers are disclosed. In one embodiment, a hybrid bonding system for semiconductor wafers includes a chamber and a plurality of sub-chambers disposed within the chamber. A robotics handler is disposed within the chamber that is adapted to move a plurality of semiconductor wafers within the chamber between the plurality of sub-chambers. The plurality of sub-chambers includes a first sub-chamber adapted to remove a protection layer from the plurality of semiconductor wafers, and a second sub-chamber adapted to activate top surfaces of the plurality of semiconductor wafers prior to hybrid bonding the plurality of semiconductor wafers together. The plurality of sub-chambers also includes a third sub-chamber adapted to align the plurality of semiconductor wafers and hybrid bond the plurality of semiconductor wafers together.
申请公布号 US9048283(B2) 申请公布日期 2015.06.02
申请号 US201213542507 申请日期 2012.07.05
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Liu Ping-Yin;Lin Shih-Wei;Huang Xin-Hua;Chao Lan-Lin;Tsai Chia-Shiung
分类号 H01L21/30;H01L23/00 主分类号 H01L21/30
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A hybrid bonding method for semiconductor wafers, the method comprising: forming a protection layer over top surfaces of a first semiconductor wafer and a second semiconductor wafer; placing the first semiconductor wafer and the second semiconductor wafer into a chamber; removing the protection layer from over the top surfaces of the first semiconductor wafer and the second semiconductor wafer; activating the top surfaces of the first semiconductor wafer and the second semiconductor wafer; coupling the top surface of the second semiconductor wafer to the top surface of the first semiconductor wafer; and hybrid bonding the first semiconductor wafer to the second semiconductor wafer; wherein removing the protection layer, activating the top surfaces, coupling the top surface of the second semiconductor wafer to the top surface of the first semiconductor wafer, and hybrid bonding the first semiconductor wafer to the second semiconductor wafer are performed without removing the first semiconductor wafer and the second semiconductor wafer from the chamber.
地址 Hsin-Chu TW