Semiconductor device

摘要

By configuring an ESD protection element of an NPN transistor (101), it is possible to reduce the area of the ESD protection element and reduce the voltage in a region in which the current increases sharply, and thus possible to increase ESD tolerance. Also, it is possible to provide a highly reliable semiconductor device wherein it is possible to flatten and smooth the surface of an upper layer pad electrode (16) by dividing a pad electrode (8) into a two-layer structure sandwiching an interlayer insulating film (15), and possible to increase the junction strength of a bonding wire, and suppress damage to underlying silicon layers when bonding.

主权项

1. A semiconductor device, comprising:
a first conductivity type first semiconductor layer; a second conductivity type emitter semiconductor layer disposed on the first semiconductor layer; a first conductivity type base semiconductor layer selectively disposed on the emitter semiconductor layer; a second conductivity type collector semiconductor layer selectively disposed on the base semiconductor layer; a insulating film disposed on the collector semiconductor layer; a pad electrode disposed on the insulating film, electrically connected via a plurality of contact holes formed in the insulating film to the collector semiconductor layer; and a metal electrode electrically connected to the first semiconductor layer, emitter semiconductor layer, and base semiconductor layer, wherein the width of the base semiconductor layer sandwiched between the emitter semiconductor layer and collector semiconductor layer is greater than the width of a depletion layer spreading toward the first semiconductor layer in the base semiconductor layer at the avalanche voltage of a diode formed of the collector semiconductor layer and base semiconductor layer, and a transistor formed of the collector semiconductor layer, base semiconductor layer, and emitter semiconductor layer becomes conductive at a voltage higher than the avalanche voltage of the diode.