Apparatus and method for heating semiconductor wafers via microwaves

摘要

An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture contains a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer includes: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture having a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.

主权项

1. An apparatus for heating a semiconductor wafer comprising:
a microwave source; an applicator cavity; a fixture for supporting said wafer in said applicator cavity, said fixture comprising a structural member providing mechanical support for said wafer and a metallic ring grounded with respect to said applicator cavity and disposed generally parallel to and coaxial with said wafer at an adjustable distance from said wafer, whereby the application of microwave power to said wafer may be modified to compensate for edge effects; noncontacting temperature monitors positioned to measure temperature near the edge and center of said wafer, respectively; a means of adjusting said distance between said wafer and said ring; and, a closed-loop feedback system to adjust said distance during heating based on said respective temperature measurements.