发明名称 |
Electronic device including a nonvolatile memory structure having an antifuse component |
摘要 |
An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include a substrate, an access transistor, a read transistor, and an antifuse component. Each of the access and read transistors can include source/drain regions at least partly within the substrate, a gate dielectric layer overlying the substrate, and a gate electrode overlying the gate dielectric layer. An antifuse component can include a first electrode lying at least partly within the substrate, an antifuse dielectric layer overlying the substrate, and a second electrode overlying the antifuse dielectric layer. The second electrode of the antifuse component can be coupled to one of the source/drain regions of the access transistor and to the gate electrode of the read transistor. In an embodiment, the antifuse component can be in the form of a transistor structure. The electronic device can be formed using a single polysilicon process. |
申请公布号 |
US9048237(B2) |
申请公布日期 |
2015.06.02 |
申请号 |
US201414258260 |
申请日期 |
2014.04.22 |
申请人 |
Semiconductor Components Industries, LLC |
发明人 |
Agam Moshe;Yao Thierry Coffi Herve;Liu Skip Shizhen |
分类号 |
H01L29/00;H01L23/525;H01L27/112;H01L27/10;H01L29/78 |
主分类号 |
H01L29/00 |
代理机构 |
Abel Law Group, LLP |
代理人 |
Abel Law Group, LLP |
主权项 |
1. An electronic device including a nonvolatile memory cell, wherein the nonvolatile memory cell comprises:
a substrate; an access transistor having source/drain regions at least partly within the substrate, a gate dielectric layer overlying the substrate, and a gate electrode overlying the gate dielectric layer; a read transistor having source/drain regions at least partly within the substrate, a gate dielectric layer overlying the substrate, and a gate electrode overlying the gate dielectric layer; and an antifuse component including a first electrode lying at least partly within the substrate, an antifuse dielectric layer overlying the substrate, and a second electrode overlying the antifuse dielectric layer, wherein the second electrode of the antifuse component is coupled to one of the source/drain regions of the access transistor and to the gate electrode of the read transistor. |
地址 |
Phoenix AZ US |