| 发明名称 | Semiconductor devices, methods of manufacture thereof, and methods of manufacturing capacitors | ||
| 摘要 | Semiconductor devices, methods of manufacture thereof, and methods of manufacturing capacitors are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a capacitor over a workpiece. The capacitor includes a bottom electrode, a capacitor dielectric disposed over the bottom electrode, and a top electrode disposed over the capacitor dielectric. A portion of the bottom electrode and a portion of the top electrode are removed proximate edges of the capacitor dielectric. | ||
| 申请公布号 | US9048212(B2) | 申请公布日期 | 2015.06.02 |
| 申请号 | US201213472304 | 申请日期 | 2012.05.15 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Tu Kuo-Chi |
| 分类号 | H01L21/02;H01L49/02 | 主分类号 | H01L21/02 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A method of manufacturing a semiconductor device, the method comprising: forming a capacitor over a workpiece, the capacitor comprising a bottom electrode, a capacitor dielectric disposed over the bottom electrode, and a top electrode disposed over the capacitor dielectric; and simultaneously removing a portion of the bottom electrode and a portion of the top electrode proximate edges of the capacitor dielectric. | ||
| 地址 | Hsin-Chu TW | ||