Method for selectively modifying spacing between pitch multiplied structures

摘要

Methods for circuit material processing are provided. In at least one such method, a substrate is provided with a plurality of overlying spacers. The spacers have substantially straight inner sidewalls and curved outer sidewalls. An augmentation material is formed on the plurality of spacers such that the inner or the outer sidewalls of the spacers are selectively expanded. The augmentation material can bridge the upper portions of pairs of neighboring inner sidewalls to limit deposition between the inner sidewalls. The augmentation material is selectively etched to form a pattern of augmented spacers having a desired augmentation of the inner or outer sidewalls. The pattern of augmented spacers can then be transferred to the substrate through a series of selective etches such that features formed in the substrate achieve a desired pitch.

主权项

1. A method for integrated circuit fabrication, comprising:
forming a memory array, wherein forming the memory array comprises:
forming a plurality of free-standing spacers over a substrate having an array region and a periphery region;selectively forming an augmentation material on one side of each of the spacers to form a plurality of augmented spacers, the spacers and augmentation material extending across the array region; andforming a pattern in the substrate, wherein features of the pattern are derived from the plurality of augmented spacers.