| 发明名称 | Mechanisms for forming ultra shallow junction | ||
| 摘要 | A method of making a semiconductor device includes forming a fin structure over a substrate. The method further includes performing a plasma doping process on the fin structure. Performing the plasma doping process includes implanting plasma ions into the fin structures at a plurality of implant angles, and the plurality of implant angles has an angular distribution and at least one highest angle frequency value. | ||
| 申请公布号 | US9048181(B2) | 申请公布日期 | 2015.06.02 |
| 申请号 | US201414288158 | 申请日期 | 2014.05.27 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Wu Chii-Ming;Huang Yu Lien;Tsai Chun Hsiung |
| 分类号 | H01L21/26;H01L21/265;H01L29/66;H01L21/8234;H01L21/223;H01L29/78 | 主分类号 | H01L21/26 |
| 代理机构 | Lowe Hauptman & Ham, LLP | 代理人 | Lowe Hauptman & Ham, LLP |
| 主权项 | 1. A method of making a semiconductor device, the method comprising: forming a fin structure over a substrate; performing a plasma doping process on the fin structure, wherein performing the plasma doping process comprises implanting plasma ions into the fin structure at a plurality of implant angles simultaneously, and the plurality of implant angles has an angular distribution and at least one highest angle frequency value. | ||
| 地址 | TW | ||