Solid-state image sensing device containing electron multiplication function having N-type floating diffusion (FD) region formed within a P-type well region

摘要

A solid state imaging device includes a P-type semiconductor substrate 1A, a P-type epitaxial layer 1B grown on the semiconductor substrate 1A, an imaging region VR grown within the epitaxial layer 1B, and an N-type semiconductor region 1C grown within the epitaxial layer 1B. The solid state imaging device further includes a horizontal shift register HR that transmits a signal from the imaging region VR, and a P-type well region 1D formed within the epitaxial layer 1B. The N-type semiconductor region 1C extends in the well region 1D. A P-type impurity concentration in the well region 1D is higher than a P-type impurity concentration in the epitaxial layer 1B. A multiplication register EM that multiplies electrons from the horizontal shift register HR is formed in the well region 1D.

主权项

1. A solid state imaging device with an electron multiplying function comprising:
a P-type semiconductor substrate; a first P-type epitaxial well layer on the semiconductor substrate; an imaging region formed within and in contact with the first P-type epitaxial well layer that serves as a potential well for the imaging region; a horizontal shift register that includes an N-type semiconductor region formed within the first P-type epitaxial well layer and that transmits a signal from the imaging region; a second P-type well region formed within the first P-type epitaxial well layer; and a multiplication register that multiplies electrons from the horizontal shift register, the multiplication register formed within and in contact with the second P-type well region that serves as a potential well for the multiplication register, wherein the N-type semiconductor region extends in the second P-type well region, and a P-type impurity concentration in the second P-type well region is higher than a P-type impurity concentration in the first P-type epitaxial well layer.