Circuit and method for spin-torque MRAM bit line and source line voltage regulation

摘要

Circuitry and a method for regulating voltages applied to source and bit lines of a spin-torque magnetoresistive random access memory (ST-MRAM) reduces time-dependent dielectric breakdown stress of the word line transistors. During a read or write operation, only the selected bit lines and source lines are pulled down to a low voltage and/or pulled up to a high voltage depending on the operation (write 0, write 1, and read) being performed. The unselected bit lines and source lines are held at the voltage while separately timed signals pull up or pull down the selected bit lines and source lines during read and write operations.

主权项

1. A method of operation of a magnetoresistive memory that includes a magnetic bit cell, the magnetic bit cell including a magnetic tunnel junction coupled in series with a select transistor, the method comprising:
applying a first voltage at a first end of the magnetic bit cell; delaying for a delay after applying the first voltage; and after delaying for the delay, applying a second voltage at a second end of the magnetic bit cell.