Semiconductor devices including avalanche photodetector diodes integrated on waveguides and methods for fabricating the same

摘要

Semiconductor devices and methods for fabricating semiconductor devices are provided. In one example, a method for fabricating a semiconductor device includes etching a trench into a waveguide layer in a detector region of a semiconductor substrate. An avalanche photodetector diode is formed about the trench. Forming the avalanche photodetector diode includes forming a multiplication region in the waveguide layer laterally adjacent to the trench. An absorption region is formed at least partially disposed in the trench.

主权项

1. A method for fabricating a semiconductor device, the method comprising:
etching a trench into a waveguide layer in a detector region of a semiconductor substrate, wherein etching the trench into the waveguide layer comprises removing material from the waveguide layer to expose a sidewall and a lower section of the waveguide layer to form the trench; and forming an avalanche photodetector diode about the trench comprising:
forming a first multiplication region in the waveguide layer laterally adjacent to the trench, wherein forming the avalanche photodetector diode comprises P− doping the sidewall and the lower section to form a P− charge layer, and wherein forming the first multiplication region comprises forming the first multiplication region laterally adjacent to the P− charge layer; andforming an absorption region at least partially disposed in the trench, wherein forming the first multiplication region comprises forming an n-well in the waveguide layer laterally spaced apart from the P− charge layer to form the first multiplication region disposed between the n-well and the P− charge layer.