发明名称 COMPOSITION FOR FORMING TOPCOAT LAYER AND RESIST PATTERN FORMATION METHOD EMPLOYING THE SAME
摘要 The present invention relates to a method for forming a pattern using extreme ultraviolet light, and provides a composition for forming a topcoat layer capable of generating an excellent pattern in an aspect of roughness and a pattern shape, and a method for forming a pattern employing the same. The present invention comprises a composition for forming a topcoat layer, which includes a graphene derivative and a solvent having a hydrophilic group, and provides a method for forming a pattern by exposing and developing a resist layer after applying the composition on the surface of a resist, wherein the composition may also include a polymer.
申请公布号 KR20150059574(A) 申请公布日期 2015.06.01
申请号 KR20140042023 申请日期 2014.04.08
申请人 SAMSUNG ELECTRONICS CO., LTD.;AZ ELECTRONIC MATERIALS IP (JAPAN) KK 发明人 KIM, HYUN WOO;OKAYASU TETSUO;WANG XIAOWEI;PARK, CHEOL HONG;PAWLOWSKI GEORG;HAMA YUSUKE
分类号 G03F7/11;G03F7/00 主分类号 G03F7/11
代理机构 代理人
主权项
地址