发明名称 制备多晶矽层的方法;Preparation method of polycrystalline silicon layer
摘要 本发明公开了一种制备多晶矽层的方法,通过分批多次沉积非晶矽薄膜,并在每次沉积工艺后均进行准分子镭射工艺,不仅能够将非晶矽薄膜完全转化为多晶矽薄膜,并且能够控制多晶矽薄膜的均匀性,若干多晶矽薄膜依次层叠形成一多晶矽层,从而获得均匀性较好的多晶矽层,在提高产品性能的同时,还有效避免了显示器件中色差问题的发生,进而大幅提高了产品的良率。;The invention discloses a method for preparing polysilicon layer.Through multiple batches sedimentary of amorphous silicon thin film,and then proceed excimer laser process after each of the deposition process,Not only can be completely converted into polysilicon thin film, and the ability to control the uniformity of the polysilicon film.A number of polysilicon film cascade form a polysilicon layer in turn,to obtain a better uniformity of the polysilicon layer,improve product performance, while also effectively avoid the display devices produce color,this invention can greatly improves the yield of product.
申请公布号 TW201521085 申请公布日期 2015.06.01
申请号 TW102147045 申请日期 2013.12.18
申请人 上海和辉光电有限公司 EVERDISPLAY OPTRONICS (SHANGHAI) LIMITED 发明人 叶昱均 YEH, YU CHUN;许民庆 HSU, MIN CHING
分类号 H01L21/205(2006.01) 主分类号 H01L21/205(2006.01)
代理机构 代理人 叶大慧
主权项
地址 中国大陆 CN