THREE-ELECTRODE STRUCTURE BASED ON SEMICONDUCTOR FABRICATION TECHNIQUES

摘要

The present invention relates to a three-electrode structure for a vacuum electronic device, capable of satisfying a high process precision, reducing processing costs, facilitating a manufacturing process, and securing the stability of a feature control in an electromagnetic wave process through a stabilized silicon photocrystalline lattice, in an electric field application type fine pattern three-electrode structure for application to the vacuum electronic device.