A memory device is provided. The memory device comprises: first to third selection lines extended in the first direction, and sequentially arranged in the second direction crossing the first direction; first to third perpendicular columns coupled to each of the selection lines, and sequentially arranged in the second direction; a first auxiliary wire connecting the third perpendicular column coupled to the first selection line and the first perpendicular column coupled to the second selection line; a second auxiliary wire connecting the third perpendicular column coupled to the second selection line and the first perpendicular column coupled to the third selection line; and a bit line connected to the auxiliary wires and extended in the second direction.
