| 摘要 |
<p>The invention relates to the field of industrial processes for forming a semiconductor layer, especially with a view to photovoltaic applications, and more particularly to a process for forming a semiconductor layer of I-III-VI2 type by heat treatment and chalcogenization of a metallic precursor of I-III type, the process comprising: - a heating step S1 under an inert atmosphere during which the temperature increases uniformly up to a first temperature T1 of between 460°C and 540°C, in order to enable the densification of the metallic precursor (2), and - a chalcogenization step S2 beginning at said first temperature T1 and during which the temperature continues to increase up to a second temperature T2, a stabilization temperature, of between 550°C and 600°C, in order to enable the formation of the semiconductor layer. The formation of a semiconductor layer, or equivalently of an absorber, having a gain in conversion efficiency of around 4%, is thus advantageously achieved.</p> |
