| 摘要 |
Disclosed are an organic group 14 metalloid azide compound represented by the following Chemical Formula 1, and a film forming method using the compound as a precursor. In the Chemical Formula 1, M is Si or Ge, A and B are independently a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 12 carbon atoms, an alkyl amine group having 2 to 10 carbon atoms, an aralkyl amine group having 7 to 13 carbon atoms, a cyclic amine group having 3 to 10 carbon atoms, a heterocyclic amine group having 3 to 10 carbon atoms, an aryl amine group having 6 to 12 carbon atoms, or an alkylsilyl amine group having 2 to 10 carbon atoms, and L is selected among a halogen atom and hydrogen atom or an azide group. The organic group 14 metalloid azide compound is suitable for depositing a group 4 metalloid nitride film such as silicon nitride film as a single source only without ammonia and hydrazine as a separate nitrogen source. |
