| 摘要 |
A MOSFET (1) which includes a main surface and comprises: SiC layers (11) on which a plurality of contact regions (15) are formed; and a plurality of source electrodes which are formed on and in contact with the contact regions (15). In a plan view of the main surface of the MOSFET (1), a plurality of cells (CL), which include the contact regions (15) and the source electrodes and have a hexagonal outer peripheral shape including a long dimension, are formed adjacent to one another. The contact resistance of the contact regions (15) and the source electrodes of the MOSFET (1) can be further decreased, and therefore the electrical properties of the present invention can be further improved. |
