SEMICONDUCTOR LIGHT-EMITTING DIODE CHIP

摘要

Provided is a semiconductor light-emitting diode chip. Corresponding patterned current expansion layers (200a, 200b) are separately disposed under an N pad (102a) and a P pad (101a), and electronic composite light emission exists in each light emitting composite region. Compared with the prior art, the area of the light emitting composite region is increased, thereby effectively improving the current distribution and the light emitting brightness of the chip; in addition, the patterned current expansion can effectively improve the adhesive force of surfaces of the pads, thereby improving the reliability of the chip.