发明名称 Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium
摘要 Heating within a plane of a substrate may be uniform while a thermal budget is decreased. A substrate processing apparatus includes a process chamber configured to accommodate a substrate; a substrate mounting unit installed in the process chamber and configured to have the substrate placed thereon; an electromagnetic wave supply unit configured to supply an electromagnetic wave to the substrate placed on the substrate mounting unit; and a choke groove formed on a side surface of the substrate mounting unit.
申请公布号 US2015147894(A1) 申请公布日期 2015.05.28
申请号 US201514614625 申请日期 2015.02.05
申请人 Hitachi Kokusai Electric Inc. 发明人 HAMANO Katsuyoshi;UMEKAWA Atsushi;JODA Takuya;ISHII Akinori;OKUNO Masahisa
分类号 H01L21/67;H01L21/268 主分类号 H01L21/67
代理机构 代理人
主权项 1. A substrate processing apparatus comprising: a process chamber configured to accommodate a substrate; a substrate mounting unit installed in the process chamber and configured to have the substrate placed thereon; an electromagnetic wave supply unit configured to supply an electromagnetic wave to the substrate placed on the substrate mounting unit; and a choke groove formed on a side surface of the substrate mounting unit.
地址 Tokyo JP