发明名称 CHAMBER UNDERCOAT PREPARATION METHOD FOR LOW TEMPERATURE ALD FILMS
摘要 Methods and apparatus disclosed herein relate to the formation and use of undercoats on the interior surfaces of reaction chambers used to deposit films on substrates. The undercoats are deposited through atomic layer deposition methods. The disclosed undercoats help prevent metal contamination, provide improved resistance to flaking, and are relatively thin. Because of the superior resistance to flaking, the disclosed undercoats allow more substrates to be processed between subsequent cleaning operations, thereby increasing throughput.
申请公布号 US2015147482(A1) 申请公布日期 2015.05.28
申请号 US201314089653 申请日期 2013.11.25
申请人 Lam Research Corporation 发明人 Kang Hu;Qian Jun;LaVoie Adrien
分类号 C23C16/56 主分类号 C23C16/56
代理机构 代理人
主权项 1. A method of forming an undercoat on interior surfaces of a reaction chamber for processing substrates, comprising: (a) introducing a flow of a first reactant in vapor phase into the reaction chamber and allowing the first reactant to adsorb onto the interior surfaces of the reaction chamber; (b) introducing a flow of a second reactant in vapor phase into the reaction chamber while the first reactant is adsorbed on the interior surfaces of the reaction chamber; and (c) exposing the reaction chamber to plasma when the flow of at least one of the first and second reactants has ceased, in order to drive a reaction between the first and second reactants on the interior surfaces of the reaction chamber to form the undercoat, wherein the undercoat conformally coats the interior surfaces of the reaction chamber; wherein operations (a)-(c) occur when there is no substrate present in the reaction chamber, and wherein operations (a)-(c) are repeated until the undercoat is at least about 0.1 μm thick.
地址 Fremont CA US