| 发明名称 |
SEMICONDUCTOR CHIPS WITH THROUGH-SILICON VIAS, AND SEMICONDUCTOR PACKAGES INCLUDING THE SAME |
| 摘要 |
Provided is a semiconductor device with through-silicon vias. The device includes a substrate including a lower semiconductor layer, a buried insulating layer, and an upper semiconductor layer, electronic devices on the upper semiconductor layer, a vertical electrode structure including a vertical electrode penetrating the substrate, and an electrode separation pattern surrounding the vertical electrode structure in a plan view and penetrating the upper semiconductor layer to directly contact the buried insulating layer. |
| 申请公布号 |
US2015145124(A1) |
申请公布日期 |
2015.05.28 |
| 申请号 |
US201414327674 |
申请日期 |
2014.07.10 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
KANG SinWoo;CHO Sungdong |
| 分类号 |
H01L23/48;H01L23/00 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate including a lower semiconductor layer, a buried insulating layer, and an upper semiconductor layer; electronic devices on the upper semiconductor layer; a vertical electrode structure including a vertical electrode penetrating the substrate; and an electrode separation pattern defining a perimeter around the vertical electrode structure in a plan view and penetrating the upper semiconductor layer to directly contact the buried insulating layer. |
| 地址 |
Suwon-si KR |
