| 发明名称 |
BACKSIDE-ILLUMINATED PHOTODETECTOR STRUCTURE AND METHOD OF MAKING THE SAME |
| 摘要 |
A backside-illuminated photodetector structure comprising a first reflecting region, a second reflecting region and a semiconductor region. The semiconductor region is between the first reflecting region and the second reflecting region. The semiconductor region comprises a first doped region and a second doped region. |
| 申请公布号 |
US2015145082(A1) |
申请公布日期 |
2015.05.28 |
| 申请号 |
US201314087011 |
申请日期 |
2013.11.22 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
LEE Wan-Yu;KUO Ying-Hao |
| 分类号 |
H01L31/0232;H01L31/102 |
主分类号 |
H01L31/0232 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A backside-illuminated (BSI) photodetector structure comprising:
a first reflecting region; a second reflecting region; and a semiconductor region, wherein the semiconductor region is between the first reflecting region and the second reflecting region, and the semiconductor region comprises:
a first doped region; anda second doped region. |
| 地址 |
Hsinchu TW |
