发明名称 FIN STRUCTURE
摘要 A fin structure includes a substrate and a fin disposed on a top surface of the substrate. The fin has a height. An epitaxial structure surrounds the fin and the epitaxial structure has a top point which is the farthest point on the epitaxial structure away from the top surface of the substrate. There is a distance between the top point and the top surface of the substrate. A rational number of the distance to the height is not less than 7.
申请公布号 US2015145067(A1) 申请公布日期 2015.05.28
申请号 US201314092942 申请日期 2013.11.28
申请人 UNITED MICROELECTRONICS CORP. 发明人 Liao Chin-I;Chen Chun-Yu
分类号 H01L29/78 主分类号 H01L29/78
代理机构 代理人
主权项 1. A fin structure, comprising: a substrate; a fin disposed on a top surface of the substrate, wherein the fin has a height; and an epitaxial structure surrounding the fin, wherein the epitaxial structure has a middle line extending in a vertical direction, the middle line separates the epitaxial structure symmetrically, the middle line starts from a top surface of the epitaxial structure and ends at a top surface of the substrate, and the middle line has a length; wherein a rational number of the length to the height H is not less than 7.
地址 Hsin-Chu City TW