| 发明名称 |
Semiconductor Device with Cell Trench Structures and Contacts and Method of Manufacturing a Semiconductor Device |
| 摘要 |
A semiconductor mesa is formed in a semiconductor layer between a first cell trench structure and a second cell trench structure extending from a first surface into the semiconductor layer. An opening is formed in a capping layer formed on the first surface, wherein the opening exposes at least a portion of the semiconductor mesa. Through the opening impurities of a first conductivity type are introduced into the exposed portion of the semiconductor mesa. A recess defined by the opening is formed. |
| 申请公布号 |
US2015145028(A1) |
申请公布日期 |
2015.05.28 |
| 申请号 |
US201314092312 |
申请日期 |
2013.11.27 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Laven Johannes Georg;Cotorogea Maria |
| 分类号 |
H01L29/78;H01L29/423;H01L21/265;H01L29/06;H01L29/66;H01L29/417;H01L29/10 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming a semiconductor mesa in a semiconductor layer between a first cell trench structure and a second cell trench structure extending from a first surface into the semiconductor layer; forming an opening in a capping layer formed on the first surface, wherein the opening exposes at least a portion of the semiconductor mesa; introducing, through the opening, impurities of a first conductivity type into the exposed portion of the semiconductor mesa; and forming a recess defined by the opening. |
| 地址 |
Neubiberg DE |
