INTEGRATED CIRCUITS WITH SHALLOW TRENCH ISOLATIONS, AND METHODS FOR PRODUCING THE SAME

摘要

Integrated circuits with electrical components near shallow trench isolations and methods for producing such integrated circuits are provided. The method includes forming a trench is a substrate, where the trench has a trench surface. A barrier layer including silicon and germanium is formed overlying the trench surface. A shallow trench isolation is then formed with a core overlying the barrier layer, where the core includes a shallow trench isolation insulator.

主权项

1. A method of producing an integrated circuit comprising:
forming a trench in a substrate, wherein the trench comprises a trench surface; forming a barrier layer overlying the trench surface, wherein the barrier layer comprises silicon and germanium; and forming a shallow trench isolation by forming a core overlying the barrier layer, wherein the core comprises a shallow trench isolation insulator.