ARRAY SUBSTRATE FOR DISPLAY DEVICE

摘要

The present invention provides a display device and a dual gate type thin film transistor (TFT) structure for an electronic device. According to an embodiment, the dual gate TFT structure includes a first gate electrode formed on a substrate; a semiconductor layer formed on the first gate electrode; an insulating layer formed on the semiconductor layer, and including first, second and third contact holes therein; drain and source electrodes in contact with the semiconductor layer respectively through the first and second contact holes; a passivation layer formed on the drain electrode and the source electrode, and including a fourth contact hole therein; a planarization layer formed on the passivation layer, and including a fifth contact hole therein; and a second gate electrode formed on the planarization layer, and in electrical contact with the first gate electrode through the third, fourth and fifth contact holes.

主权项

1. A display device comprising:
a first gate electrode and a gate insulating layer both formed on a substrate; a semiconductor layer formed on the gate insulating layer; an etch stopper formed on the gate insulating layer, and including first, second and third contact holes therein; a drain electrode and a source electrode both formed on the etch stopper, and both in contact with the semiconductor layer respectively through the first and second contact holes; a first auxiliary pattern in contact with the first gate electrode through the third contact hole; a passivation layer formed on the drain electrode and the source electrode, and including a fourth contact hole therein; a second auxiliary pattern in contact with the first auxiliary pattern through the fourth contact hole; a planarization layer formed on the passivation layer and the second auxiliary pattern, and including a fifth contact hole herein; and a second gate electrode formed on the planarization layer, and in contact with the second auxiliary pattern through the fifth contact hole.