VERTICAL SEMICONDUCTOR DEVICES INCLUDING SUPERLATTICE PUNCH THROUGH STOP LAYER AND RELATED METHODS

摘要

A semiconductor device may include a substrate, and a plurality of fins spaced apart on the substrate. Each of the fins may include a lower semiconductor fin portion extending vertically upward from the substrate, and at least one superlattice punch-through layer on the lower fin portion. The superlattice punch-through layer may include a plurality of stacked groups of layers, with each group of layers of the superlattice punch-through layer comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. Each fin may also include an upper semiconductor fin portion on the at least one superlattice punch-through layer and extending vertically upward therefrom. The semiconductor device may also include source and drain regions at opposing ends of the fins, and a gate overlying the fins.

主权项

1. A method for making a semiconductor device comprising:
forming a plurality of fins on a substrate by
forming a plurality of spaced apart lower semiconductor fin portions extending vertically upward from the substrate,forming at least one respective superlattice punch-through stop layer on each of the lower fin portions, each superlattice punch-through stop layer including a plurality of stacked groups of layers, each group of layers of the superlattice punch-through stop layer comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions, andforming a respective upper semiconductor fin portion on each of the at least one superlattice punch-through stop layers and extending vertically upward therefrom; forming source and drain regions at opposing ends of the fins; and forming a gate overlying the fins.