SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

The present disclosure relates to a semiconductor light emitting device, comprising: a supporting substrate having a first surface and a second surface opposite to the first surface; at least one semiconductor stack formed on the first surface, wherein each stack includes a plurality of semiconductor layers grown sequentially using a growth substrate and composed of a first semiconductor layer, a second semiconductor layer, and an active layer generating light via electron-hole recombination, and wherein a growth substrate-removed surface is formed on the side of the first semiconductor layer; a bonded layer, which bonds the second semiconductor layer side of the plurality of semiconductor layers to the first surface side of the supporting substrate; and a bonded layer-removed surface formed on the first surface, being open towards the plurality of semiconductor layer to supply current thereto.

主权项

1. A semiconductor light emitting device, comprising:
a supporting substrate having a first surface and a second surface opposite to the first surface; at least one semiconductor stack formed on the first surface, wherein each stack includes a plurality of semiconductor layers grown sequentially using a growth substrate and composed of a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light via electron-hole recombination, and wherein a growth substrate-removed surface is formed on the side of the first semiconductor layer; a bonded layer, which bonds the second semiconductor layer side of the plurality of semiconductor layers to the first surface side of the supporting substrate; and a bonded layer-removed surface formed on the first surface, being open towards the plurality of semiconductor layer to supply current thereto.