发明名称 MOLECULAR BEAM ENHANCED GCIB TREATMENT
摘要 A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes using one or more molecular beams to optimize pressure at localized regions of the ion beam.
申请公布号 US2015144786(A1) 申请公布日期 2015.05.28
申请号 US201414550417 申请日期 2014.11.21
申请人 TEL Epion Inc. 发明人 Gwinn Matthew C.
分类号 H01J37/30;H01J37/20;H01J37/18 主分类号 H01J37/30
代理机构 代理人
主权项 1. A gas cluster ion beam (GCIB) system, comprising: a vacuum processing system; a gas cluster ion beam (GCIB) generating system configured to generate a GCIB in said vacuum processing system; a molecular beam generating system configured to generate a molecular beam in said vacuum processing system; a substrate holder configured to hold a substrate in a substrate plane, and positioned to intersect said substrate with said GCIB; and a scanning system coupled to said substrate holder, and configured to scan said substrate through said GCIB such that said GCIB intersects said substrate.
地址 Billerica MA US