VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

A manufacturing method of a vertical memory device stacks a layer insulation film and a sacrificial film including polysilicon or amorphous silicon on a substrate repeatedly and alternately. Channel holes which expose the upper side of the substrate by passing through the layer insulation films and the sacrificial films are formed. A channel is formed inside the channel hole. Openings which expose the upper side of the substrate by etching the layer insulation films and the sacrificial films adjacent to the channel are formed. A gap is formed between the layer insulation films by removing the sacrificial films. Gate lines which are filled with the gap are formed. The sacrificial film is selectively removed by forming the sacrificial film by using a material having a high etching selection ratio than the layer insulation film.