发明名称 SYSTEM AND METHOD FOR REDUCING DARK CURRENT DRIFT IN A PHOTODIODE BASED ELECTRON DETECTOR
摘要 A sensing element that may include (a) a PIN diode that may include an anode that is coupled to an anode contact; a cathode that is coupled to a cathode contact; a semiconductor portion that has a sensing region; and an insulator that is positioned between the cathode contact and the anode contact; and (b) a shielding element. The insulator, the cathode contact and the anode contact are positioned between the shielding element and the semiconductor portion. The shielding element is shaped and positioned to facilitate radiation to impinge onto the sensing region of the semiconductor portion while at least partially shielding the insulator from electrons that are emitted from the sensing region.
申请公布号 US2015145090(A1) 申请公布日期 2015.05.28
申请号 US201314089571 申请日期 2013.11.25
申请人 APPLIED MATERIALS ISRAEL, LTD. 发明人 Margulis Pavel
分类号 H01L31/02;H01L31/105 主分类号 H01L31/02
代理机构 代理人
主权项 1. A sensing element, comprising: a PIN diode having an anode coupled to an anode contact, a cathode coupled to a cathode contact, a semiconductor portion that has a sensing region, and an insulator positioned between the cathode contact and the anode contact; and a shielding element; wherein the insulator, the cathode contact and the anode contact are positioned between the shielding element and the semiconductor portion, and the shielding element is shaped and positioned to facilitate radiation to impinge onto the sensing region of the semiconductor portion while at least partially shielding the insulator from electrons that are emitted from the sensing region.
地址 Rehovot IL