| 发明名称 |
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME |
| 摘要 |
A semiconductor device including: a first gate pattern disposed in a peripheral region of a substrate; a second gate pattern disposed in a cell region of the substrate; a first insulator formed on sidewalls of the first gate pattern; and a second insulator formed on sidewalls of the second gate pattern, wherein a dielectric constant of the first insulator is different from a dielectric constant of the second insulator, and wherein a height of the second insulator is greater than a height of the second gate pattern. |
| 申请公布号 |
US2015145056(A1) |
申请公布日期 |
2015.05.28 |
| 申请号 |
US201414565903 |
申请日期 |
2014.12.10 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Lee Jung-Chan;Lee Seung-Jae;Kang Sang-Bom;Kwak Dae-Young;Kim Myeong-Cheol;Jeon Yong-Ho |
| 分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first gate pattern disposed in a peripheral region of a substrate; a second gate pattern disposed in a cell region of the substrate; a first insulator formed on sidewalls of the first gate pattern; and a second insulator formed on sidewalls of the second gate pattern, wherein a dielectric constant of the first insulator is different from a dielectric constant of the second insulator, and wherein a height of the second insulator is greater than a height of the second gate pattern. |
| 地址 |
Suwon-si KR |
