| 发明名称 |
METAL OXIDE SEMICONDUCTOR AND METHOD OF MAKING |
| 摘要 |
A drain extended metal oxide semiconductor (MOS) includes a substrate having a semiconductor. A gate is located on the semiconductor, a source is located on the semiconductor and on one side of the gate, and a drain is located on the semiconductor and on another side of said gate. The MOS includes least one first finger having a first finger drain component located adjacent the drain, the first finger drain component has a silicide layer. At least one second finger has a second finger drain component located adjacent the drain, the second finger drain component has less silicide than the first finger drain component. |
| 申请公布号 |
US2015145040(A1) |
申请公布日期 |
2015.05.28 |
| 申请号 |
US201414543123 |
申请日期 |
2014.11.17 |
| 申请人 |
Texas Instruments Incorporated |
发明人 |
Appaswamy Aravind C.;Salman Akram A.;Farbiz Farzan |
| 分类号 |
H01L29/78;H01L29/66;H01L29/06;H01L29/10;H01L29/45 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A drain extended metal oxide semiconductor (MOS) comprising:
a substrate having a semiconductor; a gate located on the semiconductor; a source located on the semiconductor and on one side of the gate; a drain located on the semiconductor and on another side of said gate; at least one first finger, the at least one first finger having a first finger drain component located adjacent the drain, the first finger drain component having a silicide layer; and at least one second finger, the at least one second finger having a second finger drain component located adjacent the drain, the second finger drain component having less silicide than the first finger drain component. |
| 地址 |
Dallas TX US |
