发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE |
摘要 |
A p-type region, a p− type region, and a p+ type region are selectively disposed in a surface layer of a silicon carbide substrate base. The p-type region and the p− type region are disposed in a breakdown voltage structure portion that surrounds an active region. The p+ type region is disposed in the active region to make up a JBS structure. The p− type region surrounds the p-type region to make up a junction termination structure. A Schottky electrode forms a Schottky junction with an n-type silicon carbide epitaxial layer. The Schottky electrode overhangs an interlayer insulation film covering a portion of the p-type region and this overhanging portion acts as a field plate. The p+ type region has an acceptor concentration greater than or equal to a predetermined concentration and can make a forward surge current larger. |
申请公布号 |
US2015144965(A1) |
申请公布日期 |
2015.05.28 |
申请号 |
US201314404827 |
申请日期 |
2013.03.18 |
申请人 |
FUJI ELECTRIC CO., LTD. ;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
Tsuji Takashi;Kinoshita Akimasa;Iwamuro Noriyuki;Fukuda Kenji |
分类号 |
H01L29/872;H01L29/36;H01L21/02;H01L29/16;H01L29/66 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Kawasaki-shi, Kanagawa JP |