HIGH DENSITY LINEAR CAPACITOR

摘要

A methods for fabricating a capacitor structure includes fabricating polysilicon structures (PO) on a semiconductor substrate. The method further includes fabricating Ml to diffusion (MD) interconnects on the semiconductor substrate. The polysilicon structures are disposed in an interleaved arrangement with the MD interconnects. The method also includes selectively connecting the interleaved arrangement of the MD interconnects and/or the polysilicon structures as the capacitor structure.