PHOTOMASK AND SUBSTRATE PRODUCTION METHOD USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a photomask which enables the formation of a line pattern having a high-definition part of line widths of 2-10 μm by photolithography while suppressing the increase of equipment investment and deterioration of production efficiency.SOLUTION: A photomask is used to form a line pattern having a high-definition part of line widths of 2-10 μm and a peripheral region surrounding the line pattern and includes a light shield part, a translucent part corresponding to the line pattern and a light transmissive part which surrounds the light shield part and the translucent part and corresponds to the peripheral region. The translucent part is wider than the high-definition part of the line pattern. A method of producing a substrate using the photomask is also provided.