METHOD FOR DEPOSITING FERROELECTRIC FILM, ELECTRONIC ELEMENT, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide: a method for depositing a ferroelectric film with a good crystal orientation using a chemical solution deposition method; and the like.SOLUTION: A method for depositing a ferroelectric film using a chemical solution deposition method includes: steps S21-S23 of depositing an amorphous orientation control layer; steps S25-S27 of depositing an amorphous ferroelectric film so as to be brought into contact with the amorphous orientation control layer; and a step 29 of simultaneously crystallizing the amorphous orientation control layer and the amorphous ferroelectric film. The crystallized orientation control layer has a crystal structure same with that of the crystallized ferroelectric film, and includes a ferroelectric material having a composition ratio of constituent elements different from that of constituent elements of a ferroelectric material of the crystallized ferroelectric film.