| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE |
| 摘要 |
A method of manufacturing a semiconductor device includes forming a trench in a semiconductor body. The method further includes doping a part of the semiconductor body via sidewalls of the trench by plasma doping. |
| 申请公布号 |
US2015147856(A1) |
申请公布日期 |
2015.05.28 |
| 申请号 |
US201514612344 |
申请日期 |
2015.02.03 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Irsigler Peter;Schulze Hans-Joachim |
| 分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming a trench in a semiconductor body; and doping a part of the semiconductor body via sidewalls of the trench by plasma doping. |
| 地址 |
Villach AT |
