SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of fabricating from lightly doped n- or p-type crystals SiC wafers having enough quality for use as a base layer of a high voltage power device, and to provide a novel semiconductor structure capable of blocking very high voltage.SOLUTION: This method realizes a cost solution lower than conventional CVD growth of a thick lightly doped layer on a low resistivity SiC substrate. Instead of using a highly doped substrate, which in the case of a vertical power device represents an unnecessary additional resistance, the device of this invention uses a lightly doped wafer as an n-drift zone.