| 发明名称 |
SINGLE CRYSTAL SILICON INGOT AND WAFER, AND APPARATUS AND METHOD FOR GROWING SAID INGOT |
| 摘要 |
The single crystal silicon ingot and wafer of one embodiment has a transition region formed therein which predominantly has crystal defects of 10 nm to 30 nm in size from among crystal defects included in at least one region of a vacancy predominant non-defective region and an interstitial predominant non-defective region. |
| 申请公布号 |
US2015147258(A1) |
申请公布日期 |
2015.05.28 |
| 申请号 |
US201314402405 |
申请日期 |
2013.04.02 |
| 申请人 |
LG SILTRON INCORPORATED |
发明人 |
Hong Young Ho;Hwang Jung Ha;Cha Il Seon |
| 分类号 |
C30B29/06;C30B30/04;C30B15/14 |
主分类号 |
C30B29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A single-crystal silicon ingot and wafer comprising a transition region having predominant crystal defects having a size of 10 nm to 30 nm among crystal defects included in at least one of a vacancy predominant non-defective region and an interstitial predominant non-defective region. |
| 地址 |
Gumi-si, Gyeongsangbuk-do KR |
