IN-MEMORY COMPUTATIONAL DEVICE

摘要

A computing device comprising includes a memory array having a plurality of sections with memory cells arranged in rows and column, at least one cell in each column of the memory array connected to a bit line having a bit line voltage associated with a logical 1 or a logical 0. The computing device additionally includes at least one multiplexer to connect a bit line in a column of a first section to a bit line in a column in a second section different from the first section and a decoder to activate a word line connected to a cell in the column in the second section to write the bit line voltage into the cell.

主权项

1. A computing device comprising:
a memory array comprising a plurality of sections having memory cells arranged in rows and column, at least one cell in each column of said memory array connected to a bit line having a bit line voltage associated with a logical 1 or a logical 0; and at least one multiplexer to connect a bit line in a column of a first section to a bit line in a column in a second section different from said first section; and a decoder to activate a word line connected to a cell in said column in said second section to write said bit line voltage into said cell.