MEMORY SYSTEM INCLUDING MULTI-LEVEL MEMORY CELLS AND PROGRAMMING METHOD USING DIFFERENT PROGRAM START VOLTAGES

摘要

A method of programming multi-level memory cells includes defining a first program start voltage and a second program start voltage higher than the first program start voltage, programming first memory cells among the MLC to the first program state using a program operation that begins programming of the first memory cells at the first program start voltage, and programming second memory cells among the MLC to the second program state using a program operation that begins programming of the second memory cells at the second program start voltage.

主权项

1. A method of programming a memory system including multi-level memory cells (MLC) configured to be programmed in accordance with a first program state and a second program state, wherein the first program state is indicated by a first threshold voltage distribution and the second program state is indicated by a second threshold voltage distribution having a higher level than the first threshold voltage distribution, the method comprising:
defining a first program start voltage and a second program start voltage higher than the first program start voltage; programming first memory cells among the MLC to the first program state using a program operation that begins programming of the first memory cells at the first program start voltage; and programming second memory cells among the MLC to the second program state using a program operation that begins programming of the second memory cells at the second program start voltage.