发明名称 |
SEMICONDUCTOR DEVICE HAVING DRAIN SIDE CONTACT THROUGH BURIED OXIDE |
摘要 |
A semiconductor device configured to provide high heat dissipation and improve breakdown voltage comprises a substrate, a buried oxide layer over the substrate, a buried n+ region in the substrate below the buried oxide layer, and an epitaxial layer over the buried oxide layer. The epitaxial layer comprises a p-well, an n-well, and a drift region between the p-well and the n-well. The semiconductor device also comprises a source contact, a first electrode electrically connecting the source contact to the p-well, and a gate over a portion of the p-well and a portion of the drift region. The semiconductor device further comprises a drain contact, and a second electrode extending from the drain contact through the n-well and through the buried oxide layer to the buried n+ region. The second electrode electrically connects the drain contact to the n-well and to the buried n+ region. |
申请公布号 |
US2015145039(A1) |
申请公布日期 |
2015.05.28 |
申请号 |
US201314089803 |
申请日期 |
2013.11.26 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN Tung-Yang;CHIANG Hsin-Chih;LIU Ruey-Hsin;LEI Ming-Ta |
分类号 |
H01L29/78;H01L29/66;H01L29/10;H01L29/45;H01L29/06;H01L21/283 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
|
主权项 |
1. A semiconductor device comprising:
a substrate; a buried oxide layer over the substrate; a buried n+ region in the substrate below the buried oxide layer; an epitaxial layer over the buried oxide layer, the epitaxial layer comprising;
a p-well;an n-well; anda drift region between the p-well and the n-well; a source contact; a first electrode electrically connecting the source contact to the p-well; a gate over a portion of the p-well and a portion of the drift region; a drain contact; and a second electrode extending from the drain contact through the n-well and through the buried oxide layer to the buried n+ region, wherein the second electrode electrically connects the drain contact to the n-well and to the buried n+ region. |
地址 |
Hsinchu TW |