发明名称 |
SELECTIVE NANOSCALE GROWTH OF LATTICE MISMATCHED MATERIALS |
摘要 |
Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate. |
申请公布号 |
US2015145001(A1) |
申请公布日期 |
2015.05.28 |
申请号 |
US201514610254 |
申请日期 |
2015.01.30 |
申请人 |
LEE SEUNG-CHANG;BRUECK STEVEN R.J. |
发明人 |
LEE SEUNG-CHANG;BRUECK STEVEN R.J. |
分类号 |
H01L21/02;H01L29/267;H01L29/06 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a semiconductor device comprising:
providing a substrate; depositing a plurality of nanoparticles to form a composite film comprising one or more substantially-single-particle-thick nanoparticle layers over the substrate, wherein the composite film comprises a plurality of inter-particle spaces; epitaxially growing a material over the substrate through the plurality of inter-particle spaces of the composite film, wherein the material has a lattice mismatch with the substrate; and continuing epitaxial growth of the material to laterally coalesce over a top surface of the composite film, forming a buffer layer between the composite film and the substrate, wherein the substrate comprises a Group IV substrate, and epitaxially growing the material on the buffer layer over the substrate. |
地址 |
ALBUQUERQUE NM US |